Energy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky Diodes

Graphite based Schottky diodes on Si, GaAs, and 4H-SiC

Todd Schumann, Sefaattin Tongay, Arthur F. Hebard Department of Physics, University of Florida, Gainesville FL 32611 This article demonstrates the formation of Schottky diodes on silicon (Si), gallium arsenide (GaAs), and 4H-silicon carbide (4H-SiC) using the semimetal graphite. The forward bias characteristics follow thermionic emission theory, and the extracted Schottky barrier heights closel...

4h-sic Power Schottky Diodes. on the Way to Solve Size Limiting Issues

In this paper we report on experimental results in solving defect-related issues limiting the size and performance of 4H-SiC based power Schottky diodes. Several techniques improving wafer quality were used in line to fabricate power Schottky diodes with high current capability for blocking voltage over 600 V. Results of X-ray investigation of wafers on every step of treatment from initial wafe...

Electrothermal Model of SiC Power Schottky Diodes

The paper concerns the problem of modelling d.c. characteristics of commercial SiC power Schottky diodes with self-heating taken into account. The electrothermal model of the investigated devices is proposed and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of selected SiC power Schottky di...

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes.

Fabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements as a function of applied voltage over the temperature range 20 °C - 120 °C are presented. The results show consistent performance among devices. Their leakage current density, at the highest investigated ...